Stampa la pagina Condividi su Google Condividi su Twitter Condividi su Facebook Scheda Docente

IANNUZZO FRANCESCO - Professore Associato

English version

Afferente a: Dipartimento: Ingegneria Elettrica e dell'Informazione "Maurizio Scarano"

Settore Scientifico Disciplinare: ING-INF/01

Orari di ricevimento: Martedì, ore 11-13

Recapiti:
E-Mail: iannuzzo@unicas.it
Telefono: +393384231838

Prenotazione appello

E' possibile prenotarsi ad un appello d'esame, collegandosi al portale studenti.

Elenco appelli d'esame disponibili

    Al momento non ci sono appelli disponibili.

Book chapters

M. Alderighi, M. Citterio, S. Latorre, M. Riva, P. Cova, N. Delmonte, A. Lanza, M. Bernardoni, R. Menozzi, A. Costabeber, A. Paccagnella, F. Sichirollo, G. Spiazzi, M. Stellini, P. Tenti, S. Baccaro, F. Iannuzzo, A. Sanseverino, G. Busatto, and V. De Luca, “Power distribution architecture for high energy physic hostile environment”, Astroparticle, Particle, Space Physics And Detectors For Physics Applications, Pp. 890–894, World Scientific Publishing Company, Aug. 2012. ISBN: 978-981-4405-06-5.

“Multiphysics Simulation by Design for Electrical Machines, Power Electronics and Drives”,
Dr. Marius Rosu, Dr. Ping Zhou, Dr. Dingsheng Lin, Dr. Dan M. Ionel, Dr. Mircea Popescu, Dr. Frede Blaabjerg, Dr. Vandana Rallabandi, Dr. David Staton, ISBN: 978-1-119-10344-8, Mar 2018,
312 pages

Patents

WO2014097261, “method for driving inverters, and inverter adapted to reduce switching losses”, Inventor(s): BUSATTO GIOVANNI[IT]; FRATELLI LUIGI[IT]; IANNUZZO FRANCESCO[IT]; ABBATE CARMINE[IT], Applicant(s): ANSALDOBREDA SPA[IT], Classification: international, cooperative:
H02M7/4807; H02M7/4826; H02M2001/0058; H02M2001/007; Y02B70/1491
Also published as: WO2014097261 (A3) ITTO20121112 (A1)

Invited speeches

1 Iannuzzo, F; “Modern robustness challenges in wind-scale power modules”, SEMICON Europa 2015.
2 F. Iannuzzo, “Mission-Profile-Based Methodologies for Bond Wire Stress Analysis in Power Modules”, 1st NPES - International Workshop on New Generation Power Electronics and Systems, Tokyo, Japan

Journals

76 P. Diaz Reigosa; F. Iannuzzo; M. Rahimo; C. Corvasce; F. Blaabjerg, “Improving the Short-Circuit Reliability in IGBTs -How to Mitigate Oscillations”, Accepted for publication on IEEE Transactions on Power Electronics
75 E. Gurpinar, F. Iannuzzo, Y. Yang, A. Castellazzi and F. Blaabjerg, "Design of Low Inductance Switching Power Cell for GaN HEMT Based Inverter," in IEEE Transactions on Industry Applications, vol. PP, no. 99, pp. 1-1.
doi: 10.1109/TIA.2017.2777417
74 A.S. Bahman, F. Iannuzzo, T. Holmgaard, R.Ø. Nielsen, F. Blaabjerg, “Reliability-oriented environmental thermal stress analysis of fuses in power electronics”, Microelectronics Reliability, Available online 6 July 2017, ISSN 0026-2714.
doi: 10.1016/j.microrel.2017.06.089.
73 Haoze Luo, Nick Baker, Francesco Iannuzzo, Frede Blaabjerg, “Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules”, Microelectronics Reliability, Available online 8 July 2017, ISSN 0026-2714.
doi: 10.1016/j.microrel.2017.07.004.
72 Haoze Luo, Wuhua Li, Xiangning He, Francesco Iannuzzo, Frede Blaabjerg, “Uneven temperature effect evaluation in high-power IGBT inverter legs and relative test platform design”, Microelectronics Reliability, Available online 29 June 2017, ISSN 0026-2714.
doi: 10.1016/j.microrel.2017.06.054.
71 P.D. Reigosa, F. Iannuzzo, M. Rahimo, F. Blaabjerg, “Capacitive effects in IGBTs limiting their reliability under short circuit”, Microelectronics Reliability, Available online 20 July 2017, ISSN 0026-2714.
doi: 10.1016/j.microrel.2017.07.059.
70 L. Ceccarelli, P.D. Reigosa, F. Iannuzzo, F. Blaabjerg, “A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis”, Microelectronics Reliability, Available online 9 July 2017, ISSN 0026-2714.
doi: 10.1016/j.microrel.2017.06.093.
69 U.M. Choi, F. Blaabjerg, F. Iannuzzo, “Advanced power cycler with intelligent monitoring strategy of IGBT module under test”, Microelectronics Reliability, Available online 22 June 2017, ISSN 0026-2714.
doi: 10.1016/j.microrel.2017.06.029.
68 Kristian Bonderup Pedersen, Dennis A. Nielsen, Bernhard Czerny, Golta Khatibi, Francesco Iannuzzo, Vladimir N. Popok, Kjeld Pedersen, “Wire bond degradation under thermo- and pure mechanical loading”, Microelectronics Reliability, Available online 20 July 2017, ISSN 0026-2714.
doi: 10.1016/j.microrel.2017.07.055
67 H. Luo, W. Li, F. Iannuzzo, X. He and F. Blaabjerg, "Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters Through Emitter Stray Inductance in High-Power IGBT Modules," in IEEE Transactions on Industrial Electronics, vol. 65, no. 6, pp. 4724-4738, June 2018.
doi: 10.1109/TIE.2017.2745442
66 A. S. Bahman; F. Iannuzzo; C. Uhrenfeldt; F. Blaabjerg; S. Munk-Nielsen, "Modelling of Short-Circuit-Related Thermal Stress in Aged IGBT Modules," in IEEE Transactions on Industry Applications , vol.PP, no.99, pp.1-1. doi: 10.1109/TIA.2017.2702594
65 Y. Chen; W. LI; F. Iannuzzo; H. Luo; X. He; F. Blaabjerg, "Three-Dimensional Safe Operating Area based Short-Circuit Failure Modes Investigation and Classification for High-Power IGBT Modules," in IEEE Transactions on Power Electronics , vol.PP, no.99, pp.1-1. doi: 10.1109/TPEL.2017.2682114
64 N. Baker, H. Luo, and F. Iannuzzo, (featured) “Simultaneous On-State Voltage and Bond-Wire Resistance Monitoring of Silicon Carbide MOSFETs,”, Energies, vol. 10, no. 3, 2017. doi: 10.3390/en10030384
63 Y. Chen, H. Luo, W. Li, X. He, F. Iannuzzo and F. Blaabjerg, "Analytical and Experimental Investigation on A Dynamic Thermo-Sensitive Electrical Parameter With Maximum $dI_{C}/dt$ During Turn-off for High Power Trench Gate/Field-Stop IGBT Modules," in IEEE Transactions on Power Electronics, vol. 32, no. 8, pp. 6394-6404, Aug. 2017. doi: 10.1109/TPEL.2016.2619620
62 P. D. Reigosa, F. Iannuzzo, H. Luo and F. Blaabjerg, "A Short-Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules," in IEEE Transactions on Industry Applications, vol. 53, no. 3, pp. 2880-2887, May-June 2017. doi: 10.1109/TIA.2016.2628895
------ 2016
61 Choi, U.M., Blaabjerg, F., Jørgensen, S., Iannuzzo, F., Wang, H., Uhrenfeldt, C., Munk-Nielsen, S. “Power cycling test and failure analysis of molded Intelligent Power IGBT Module under different temperature swing durations” (2016) Microelectronics Reliability, 64, pp. 403-408. DOI: 10.1016/j.microrel.2016.07.020
60 Bahman, A.S., Iannuzzo, F., Blaabjerg, F. “Mission-profile-based stress analysis of bond-wires in SiC power modules” (2016) Microelectronics Reliability, 64, pp. 419-424. DOI: 10.1016/j.microrel.2016.07.102
59 Reigosa, P.D., Prindle, D., Pâques, G., Geissmann, S., Iannuzzo, F., Kopta, A., Rahimo, M. “Comparison of thermal runaway limits under different test conditions based on a 4.5 kV IGBT” (2016) Microelectronics Reliability, 64, pp. 524-529. DOI: 10.1016/j.microrel.2016.07.025si
58 E. Gurpinar, Y. Yang, F. Iannuzzo, A. Castellazzi and F. Blaabjerg, "Reliability-Driven Assessment of GaN HEMTs and Si IGBTs in 3L-ANPC PV Inverters," in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 4, no. 3, pp. 956-969, Sept. 2016. doi: 10.1109/JESTPE.2016.2566259
57 A. S. Bahman, K. Ma, P. Ghimire, F. Iannuzzo and F. Blaabjerg, "A 3-D-Lumped Thermal Network Model for Long-Term Load Profiles Analysis in High-Power IGBT Modules," in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 4, no. 3, pp. 1050-1063, Sept. 2016. doi: 10.1109/JESTPE.2016.2531631
56 Haoze Luo, Francesco Iannuzzo, Paula Diaz Reigosa, Frede Blaabjerg, Wuhua Li, Xiangning He, Modern IGBT gate driving methods for enhancing reliability of high-power converters — An overview, Microelectronics Reliability, Volume 58, March 2016, Pages 141-150, ISSN 0026-2714, doi: 10.1016/j.microrel.2015.12.022.
55 R. Wu; H. Wang; K. B. Pedersen; K. Ma; P. Ghimire; F. Iannuzzo; F. Blaabjerg, "A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations," in IEEE Transactions on Industry Applications, vol. 52, no. 4, pp. 3306-3314, July-Aug. 2016. doi: 10.1109/TIA.2016.2540614
54 N. Baker, L. Dupont, S. Munk-Nielsen, F. Iannuzzo and M. Liserre, "IR Camera Validation of IGBT Junction Temperature Measurement via Peak Gate Current," in IEEE Transactions on Power Electronics, vol. 32, no. 4, pp. 3099-3111, April 2017. doi: 10.1109/TPEL.2016.2573761
53 Iannuzzo, F., (Invited) "Short-Circuit Robustness Assessment in Power Electronic Modules for Megawatt Applications.", Facta Universitatis, Series: Electronics and Energetics 29, no. 1 (2016): 35-47. DOI: 10.2298/FUEE1601035I
52 N. Baker, S. Munk-Nielsen, F. Iannuzzo and M. Liserre, "IGBT Junction Temperature Measurement via Peak Gate Current," in IEEE Transactions on Power Electronics, vol. 31, no. 5, pp. 3784-3793, May 2016. doi: 10.1109/TPEL.2015.2464714
------- 2015
51 Abbate, C.; Busatto, G.; Cova, P.; Delmonte, N.; Giuliani, F.; Iannuzzo, F.; Sanseverino, A.; Velardi, F., "Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes," in Nuclear Science, IEEE Transactions on , vol.62, no.1, pp.202-209, Feb. 2015, http://doi: 10.1109/TNS.2014.2387014
50 U.M. Choi, F. Blaabjerg, F. Iannuzzo, S. Jørgensen, Junction temperature estimation method for a 600 V, 30A IGBT module during converter operation, Microelectronics Reliability, Volume 55, Issues 9–10, August–September 2015, Pages 2022-2026, ISSN 0026-2714, DOI: 10.1016/j.microrel.2015.06.146.
49 P.D. Reigosa, R. Wu, F. Iannuzzo, F. Blaabjerg, Robustness of MW-Level IGBT modules against gate oscillations under short circuit events, Microelectronics Reliability, Volume 55, Issues 9–10, August–September 2015, Pages 1950-1955, ISSN 0026-2714, DOI: 10.1016/j.microrel.2015.07.011.
48 C. Abbate, G. Busatto, F. Iannuzzo, S. Mattiazzo, A. Sanseverino, L. Silvestrin, D. Tedesco, and F. Velardi, “Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT,” Microelectronics Reliability, vol. 55, no. 9–10, pp. 1496–1500, Aug. 2015. DOI: 10.1016/j.microrel.2015.06.139.
47 Wu, R.; Diaz Reigosa, P.; Iannuzzo, F.; Smirnova, L.; Wang, H.; Blaabjerg, F., "Study on Oscillations During Short Circuit of MW-Scale IGBT Power Modules by Means of a 6-kA/1.1-kV Nondestructive Testing System," Emerging and Selected Topics in Power Electronics, IEEE Journal of, vol.3, no.3, pp.756,765, Sept. 2015. Doi: 10.1109/JESTPE.2015.2414448
46 Sintamarean, N.; Blaabjerg, F.; Wang, H.; Iannuzzo, F.; de Place Rimmen, P., "Reliability Oriented Design Tool For the New Generation of Grid Connected PV-Inverters," Power Electronics, IEEE Transactions on , vol.30, no.5, pp.2635,2644, May 2015. Doi: 10.1109/TPEL.2014.2361918
------- 2014
45 Bonora, N., Ruggiero, A., Iannitti, G., Abbate, C., Iannuzzo, F., & Busatto, G. (2014, May). “Mechanoluminescence of nylon under high velocity impact”. In Journal of Physics: Conference Series (Vol. 500, No. 18, p. 182005). IOP Publishing. Doi: 10.1088/1742-6596/500/18/182005
44 C. Abbate, F. Iannuzzo, G. Busatto, A. Sanseverino, F. Velardi, C. Ronsisvalle, J. Victory, “Turn-off instabilities in large area IGBTs”, Microelectronics Reliability, Volume 54, Issues 9–10, September–October 2014, Pages 1927-1934, ISSN 0026-2714, http://dx.doi.org/10.1016/j.microrel.2014.07.128.
43 C. Abbate, G. Busatto, P. Cova, N. Delmonte, F. Giuliani, F. Iannuzzo, A. Sanseverino, F. Velardi, “Thermal damage in SiC Schottky diodes induced by SE heavy ions”, Microelectronics Reliability, Volume 54, Issues 9–10, September–October 2014, Pages 2200-2206, ISSN 0026-2714, http://dx.doi.org/10.1016/j.microrel.2014.07.081.
42 Iannuzzo, F.; Abbate, C.; Busatto, G., "Instabilities in Silicon Power Devices: A Review of Failure Mechanisms in Modern Power Devices," Industrial Electronics Magazine, IEEE , vol.8, no.3, pp.28,39, Sept. 2014. doi: 10.1109/MIE.2014.2305758
41 C. Abbate, M. Alderighi, S. Baccaro, G. Busatto, M. Citterio, P. Cova, N. Delmonte, V. De Luca, S. Fiore, S. Gerardin, E. Ghisolfi, F. Giuliani, F. Iannuzzo, A. Lanza, S. Latorre, M. Lazzaroni, G. Meneghesso, A. Paccagnella, F. Rampazzo, M. Riva, A. Sanseverino, R. Silvestri, G. Spiazzi, F. Velardi, E. Zanoni, "Developments on DC/DC converters for the LHC experiment upgrades", Journal of Instrumentation, Volume 9, Issue 02, Pages: c02-c17, ISSN 1748-0221, 2014.
------ 2013
40 Busatto, G.; De Luca, V.; Iannuzzo, F.; Sanseverino, A.; Velardi, F., "Single-Event Effects in Power MOSFETs During Heavy Ion Irradiations Performed After Gamma-Ray Degradation," Nuclear Science, IEEE Transactions on, vol.60, no.5, pp.3793-3801, Oct. 2013. doi: 10.1109/TNS.2013.2278038
39 C. Abbate, G. Busatto, F. Iannuzzo, C. Ronsisvalle, A. Sanseverino, F. Velardi, Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit, Microelectronics Reliability, Volume 53, Issues 9–11, September–November 2013, Pages 1707-1712, ISSN 0026-2714, http://dx.doi.org/10.1016/j.microrel.2013.07.128.
38 C. Abbate, F. Iannuzzo, G. Busatto, Thermal instability during short circuit of normally-off AlGaN/GaN HFETs, Microelectronics Reliability, Volume 53, Issues 9–11, September–November 2013, Pages 1481-1485, ISSN 0026-2714, http://dx.doi.org/10.1016/j.microrel.2013.07.119.
------ 2012
37 L. Silvestrin, D. Bisello, G. Busatto, P. Giubilato, F. Iannuzzo, S. Mattiazzo, D. Pantano, A. Sanseverino, M. Tessaro, F. Velardi, J. Wyss. A time-resolved IBICC experiment using the IEEM of the SIRAD facility. Nuclear Instruments & Methods In Physics Research. Section B, Beam Interactions With Materials And Atoms, 2012, vol. 273; p. 234-236, ISSN: 0168-583X, doi: 10.1016/j.nimb.2011.07.083.
36 G. Busatto, V. De Luca, F. Iannuzzo, A. Sanseverino, F. Velardi, "Behavior of power MOSFETs during heavy ions irradiation performed after ?-rays exposure", Microelectronics Reliability, Vol. 52, Issues 9-10, Pages 2363-2367, September-October 2012. http://dx.doi.org/10.1016/j.microrel.2012.06.153.
35 M. Alderighi, M. Citterio, M. Riva, S. Latorre, Costabeber, A. Paccagnella, F. Sichirollo, G. Spiazzi, M. Stellini, P. Tenti, P. Cova, N. Delmonte, A. Lanza, M. Bernardoni, R. Menozzi, S. Baccaro, F. Iannuzzo, A. Sanseverino, G. Busatto, V. De Luca, F. Velardi, “Power converters for future LHC experiments”, Journal of Instrumentation, Vol. 7, March 2012, pp. 1-15. ISSN: 1748-0221, doi: 10.1088/1748-0221/7/03/C03012.
34 S. Baccaro, G. Busatto, M. Citterio, P. Cova, N. Delmonte, F. Iannuzzo, A. Lanza, M. Riva, A. Sanseverino, G. Spiazzi "Reliability oriented design of power supplies for high energy physics applications", Microelectronics Reliability, Vol. 52, Issues 9-10, pp. 2465-2470, September-October 2012. doi: 10.1016/j.microrel.2012.06.088.
33 C. Abbate, G. Busatto, F. Iannuzzo, "Unclamped repetitive stress on 1200 V normally-off SiC JFETs", Microelectronics Reliability, Volume 52, Issues 9-10, Pages 2420-2425, September-October 2012. doi: 10.1016/j.microrel.2012.06.097.
------ 2011
32 G. Busatto, D. Bisello, G. Currò, P. Giubilato, F. Iannuzzo, S. Mattiazzo, D. Pantano, A. Sanseverino, L. Silvestrin, M. Tessaro, F. Velardi, J. Wyss, "A new test methodology for an exhaustive study of single-event-effects on power MOSFETs", Microelectronics Reliability, Volume 51, Issues 9-11, September-November 2011, Pages 1995-1998, ISSN 0026-2714, DOI: 10.1016/j.microrel.2011.07.023.
31 C. Abbate, G. Busatto, F. Iannuzzo, "Operation of SiC normally-off JFET at the edges of its safe operating area", Microelectronics Reliability, Volume 51, Issues 9-11, September-November 2011, Pages 1767-1772, ISSN 0026-2714, DOI: 10.1016/j.microrel.2011.07.055.
------ 2010
30 P. Tenti, G. Spiazzi, S. Buso, M. Riva, P. Maranesi, F. Belloni, P. Cova, R. Menozzi, N. Delmonte, M. Bernardoni, F. Iannuzzo, G. Busatto, A. Porzio, F. Velardi, A. Lanza, M. Citterio and C. Meroni, “Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity”, Journal of Instrumentation, Volume 6, June 2011, DOI: 10.1088/1748-0221/6/06/P06005.
29 G. Busatto, G. Curro’, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, “Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET”, Microelectronics Reliability, Volume 50, Issues 9-11, September-November 2010, Pages 1842-1847, ISSN 0026-2714, DOI: 10.1016/j.microrel.2010.07.039.
28 C. Abbate, G. Busatto, F. Iannuzzo, “IGBT RBSOA non-destructive testing methods: Analysis and discussion”, Microelectronics Reliability, Volume 50, Issues 9-11, September-November 2010, Pages 1731-1737, ISSN 0026-2714, DOI: 10.1016/j.microrel.2010.07.050.
27 C. Abbate, G. Busatto, F. Iannuzzo, "High-Voltage, High-Performance Switch Using Series-Connected IGBTs”, IEEE Transactions on Power Electronics, Volume: 25 , Issue: 9, 2010 , Page(s): 2450 – 2459, DOI: 10.1109/TPEL.2010.2049272.
------ 2009
26 G. Busatto, G. Curro, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, “Heavy ions induced single event gate damage in medium voltage power MOSFETs”, IEEE Transactions on Nuclear Science, Volume: 56 , Issue: 6 , Part: 2, 2009, Page(s): 3573 – 3581. DOI: 10.1109/TNS.2009.2032397.
25 G. Busatto, G. Currò, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, “Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions”, Microelectronics Reliability, Volume 49, Issues 9-11, 2009, Pages 1033-1037, ISSN 0026-2714, DOI: 10.1016/j.microrel.2009.07.012.
24 G. Busatto, G. Currò, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, “Heavy-ion induced single event gate damage in medium voltage power MOSFETs”, IEEE Transactions On Nuclear Science, Vol. 56, P. 3573-3581, Issn: 0018-9499, Doi: 10.1109/Tns.2009.2032397
23 G. Busatto, C. Abbate, F. Iannuzzo, P. Cristofaro, “Instable mechanisms during unclamped operation of high power IGBT modules”, Microelectronics Reliability, Volume 49, Issues 9-11, 2009, Pages 1363-1369, ISSN 0026-2714, DOI: 10.1016/j.microrel.2009.07.026.
------ 2008
22 G. Busatto, G. Currò, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, “Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure”, Microelectronics Reliability 48 (2008), pp. 1306-1309. DOI information: 10.1016/j.microrel.2008.07.030 .
21 F. Iannuzzo, “High Performance, FPGA-based Test Apparatus for Unclamped Inductive Switching of IGBTs”, Microelectronics Reliability 48 (2008), pp. 1449-1452. DOI information: 10.1016/j.microrel.2008.07.025 .
20 G. Busatto, C. Abbate, B. Abbate, F. Iannuzzo, “IGBT Modules Robustness During Turn-Off Commutation”, Microelectronics Reliability 48 (2008), pp. 1435-1439. DOI information: 10.1016/j.microrel.2008.07.027 .
19 F. Iannuzzo, “Race-Control Algorithm for the Full-Bridge PRCP Converter Using Cost-Effective FPGAs”, IEEE Transactions on Industrial Electronics, Volume 55, Issue 4, April 2008 Page(s): 1519 - 1526. doi: 10.1109/TIE.2008.917149.
------ 2007
18 C. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo, B. Cascone, R. Manzo, “The robustness of series-connected high power IGBT modules”, Microelectronics Reliability, Volume 47, Issues 9-11, September-November 2007, Pages 1746-1750.
------ 2006
17 Busatto G., Iannuzzo F., Porzio A., Sanseverino A., Velardi F., Curro' G., “Experimental study of power MOSFET’s gate damage in radiation environment”, Microelectronics Reliability, Vol. 46, P. 1854-1857, Issn: 0026-2714, Doi: 10.1016/J.Microrel.2006.07.069
16 F. Iannuzzo, G. Busatto, C. Abbate, “Investigation of MOSFET failure in soft-switching conditions”, Microelectronics Reliability, Volume 46, Issues 9-11, September-November 2006, Pages 1790-1794.
15 C. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo, “The high frequency behaviour of high voltage and current IGBT modules”, Microelectronics Reliability, Volume 46, Issues 9-11, September-November 2006, Pages 1848-1853.
------ 2005
14 G. Busatto, A. Porzio, F. Velardi, F. Iannuzzo, A. Sanseverino, G. Currò; “Experimental and Numerical investigation about SEB/SEGR of Power MOSFET”, Microelectronics Reliability, Vol.45, pp. 1711-1716, 2005. doi: 10.1016/j.microrel.2005.07.089.
13 F. Iannuzzo; “Non-destructive Testing Technique for MOSFET’s Characterisation during Soft-Switching ZVS Operations”, Microelectronics Reliability, Vol.45, pp. 1738-1741, 2005.
------ 2004
12 G. Busatto, L. Fratelli, C. Abbate, R. Manzo, F. Iannuzzo, “Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications”, Microelectronics Reliability, Volume 44, Issues 9-11, 2004, Pages 1443-1448, ISSN 0026-2714, DOI: 10.1016/j.microrel.2004.07.071.
11 F. Iannuzzo, G.Busatto, “Physical CAD Model for High-Voltage IGBTs Based on Lumped-Charge Approach”, IEEE Transaction on Power Electronics, Volume: 19 , Issue: 4 , July 2004, Pages:885 – 893. doi: 10.1109/TPEL.2004.830085.
------ 2003
10 F. Velardi, F. Iannuzzo, G. Busatto, J. Wyss, A. Sanseverino, A. Candelori, G. Currò, A. Cascio, F. Frisina “Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment,” Microelectronics Reliability, Vol. 43/7-10, pp.1847-1851, October 2003.
9 G. Busatto, F. Iannuzzo, F. Velardi, M.Valentino, G.P.Pepe “Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement,” Microelectronics Reliability, Vol. 43/7-10, pp.1907-1912, October 2003.
8 G. Busatto, R. La Capruccia, F. Iannuzzo, F. Velardi, R. Roncella “MAGFET Based Current Sensing for Power Integrated Circuit,” Microelectronics Reliability, Vol. 43/4, pp.577-583, April 2003.
7 F. Velardi, F. Iannuzzo, G. Busatto, J. Wyss, A. Candelori, “Experimental Study of Charge Generation Mechanisms in Power MOSFETs due to Energetic Particle Impact,” Microelectronics Reliability, Vol. 43/4, pp.549-555, April 2003. doi: 10.1016/S0026-2714(03)00022-2
------ 2002
6 G. Busatto, B. Cascone, L. Fratelli, M. Balsamo, F. Iannuzzo, F. Velardi “Non_Destructive High Temperature Characterisation of High-Voltage IGBTs” Microelectronics Reliability, Vol. 42, pp.1635-1640, September-October 2002.
5 F. Velardi, F. Iannuzzo, G. Busatto, J. Wyss, A. Kaminksy, “The Reliability of New Generation Power MOSFETs in Radiation Environment,” Microelectronics Reliability, Vol. 42, pp.1629-1634, September-October 2002. doi: 10.1016/S0026-2714(02)00202-0.
------ 2001
4 F. Iannuzzo, G.V.Persiano, G.Busatto, “Measurement of the BJT activation current during the reverse recovery of power MOSFET’s drain-source diode” IEEE Trans. on Electron Devices, Vol. 48, n. 2, pp. 391-393, February 2001.
3 G.Busatto, F. Iannuzzo, F.Velardi, J.Wyss “Non-Destructive Tester for Single Event Burnout of Power Diodes”, Microelectronics Reliability, Vol. 41, n. 9-10, pp. 1725-1729, September-October 2001.
------ 2000
------ 1999
2 F. Iannuzzo, G.Busatto, “A lumped charge model for GTOs suitable for circuit simulation”, Microelectronics Journal, Volume 30, no. 6, pp. 543-550, 1999.
1 G.Busatto, G.V.Persiano, F. Iannuzzo, “Experimental and numerical investigation on MOSFET’s failure during reverse recovery of its internal diode,” IEEE Trans. Electron Devices, Vol. ED-46, No.6, pp. 1268-1273, 1999.

Other journals

4 Iannuzzo, F., Ciappa, M., (Editorial) “Reliability issues in power electronics” (2016) Microelectronics Reliability, 58, pp. 1-2. DOI: 10.1016/j.microrel.2016.01.012
3 Mauro Ciappa, Paolo Cova, Francesco Iannuzzo, Gaudenzio Meneghesso, (Editorial) Microelectronics Reliability, Volume 52, Issues 9–10, September–October 2012, Pages 1751-1752, ISSN 0026-2714. doi: 10.1016/j.microrel.2012.09.004.
2 Busatto, G., Iannuzzo, F., (Editorial) “Microelectronics Reliability: Editorial” (2010) Microelectronics Reliability, 50 (9-11), pp. 1191-1192. doi: 10.1016/j.microrel.2010.08.013
1 Ciappa, M., Cova, P., Iannuzzo, F., Meneghesso, G., (Review) “ESREF 2012 in Cagliari”, (2013), Electronic Device Failure Analysis, 15 (1), pp. 23-25. http://www.asminternational.org/web/edfas/news/edfa

International Conferences

------ 2017
84 L. Ceccarelli, P. Diaz Reigosa, A. Sajjad Bahman, F. Iannuzzo, F. Blaabjerg, “Compact Electro-Thermal Modeling for a SiC MOSFET Power Module under Short-Circuit Conditions”, 2017 IEEE 43rd Annual Conference of the IEEE Industrial Electronics Society (IECON), Beijing, China, 2017.
83 H. Luo, F. Iannuzzo, F. Blaabjerg, W. Li, X. He, “Separation Test Method for Investigation of Current Density Effect on Bond Wires of SiC Power MOSFET Module”, 2017 IEEE 43rd Annual Conference of the IEEE Industrial Electronics Society (IECON), Beijing, China, 2017.
82 A. Soldati, F. Iannuzzo, C. Concari, D. Barater, F. Blaabjerg, “Active Thermal Control by Controlled Shoot-through of Power Devices”, 2017 IEEE 43rd Annual Conference of the IEEE Industrial Electronics Society (IECON), Beijing, China, 2017.
81 A. Soldati, F. Iannuzzo, C. Concari, F. Dossena, D. Barater, F. Blaabjerg, “Active Thermal Control for Reliability Improvement of MOS-gated Power Devices”, 2017 IEEE 43rd Annual Conference of the IEEE Industrial Electronics Society (IECON), Beijing, China, 2017.
80 C. Andersson, O. Kristensen, E. Varescon and F. Iannuzzo, "Impact of bending speed and setup on flex cracks in multilayer ceramic capacitors," 2017 IEEE 11th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED), Tinos, 2017, pp. 608-614. doi: 10.1109/DEMPED.2017.8062417
79 D. Cittanti, F. Iannuzzo, E. Hoene and K. Klein, "Role of parasitic capacitances in power MOSFET turn-on switching speed limits: A SiC case study," 2017 IEEE Energy Conversion Congress and Exposition (ECCE), Cincinnati, OH, USA, 2017, pp. 1387-1394. doi: 10.1109/ECCE.2017.8095952
78 H. Luo, F. Iannuzzo, F. Blaabjerg, X. Wang, W. Li and X. He, "Elimination of bus voltage impact on temperature sensitive electrical parameter during turn-on transition for junction temperature estimation of high-power IGBT modules," 2017 IEEE Energy Conversion Congress and Exposition (ECCE), Cincinnati, OH, USA, 2017, pp. 5892-5898. doi: 10.1109/ECCE.2017.8096974
77 H. Luo, F. Iannuzzo, F. Blaabjerg, M. Turnaturi and E. Mattiuzzo, "Aging precursors and degradation effects of SiC-MOSFET modules under highly accelerated power cycling conditions," 2017 IEEE Energy Conversion Congress and Exposition (ECCE), Cincinnati, OH, USA, 2017, pp. 2506-2511. doi: 10.1109/ECCE.2017.8096478
76 A. Soldati, F. Dossena, G. Pietrini, D. Barater, C. Concari and F. Iannuzzo, "Thermal stress mitigation by Active Thermal Control: Architectures, models and specific hardware," 2017 IEEE Energy Conversion Congress and Exposition (ECCE), Cincinnati, OH, USA, 2017, pp. 3822-3829. doi: 10.1109/ECCE.2017.8096674
75 J. Martins, M. Nawaz, K. Ilves and F. Iannuzzo, "Development of PSpice modeling platform for 10 kV/100 A SiC MOSFET power module," 2017 IEEE Energy Conversion Congress and Exposition (ECCE), Cincinnati, OH, USA, 2017, pp. 4358-4365. doi: 10.1109/ECCE.2017.8096750
74 C. Ionita, M. Nawaz, K. Ilves and F. Iannuzzo, "Short-circuit ruggedness assessment of a 1.2 kV/180 A SiC MOSFET power module," 2017 IEEE Energy Conversion Congress and Exposition (ECCE), Cincinnati, OH, USA, 2017, pp. 1982-1987. doi: 10.1109/ECCE.2017.8096399
73 C. Ionita, M. Nawaz, K. Ilves and F. Iannuzzo, "Comparative assessment of 3.3kV/400A SiC MOSFET and Si IGBT power modules," 2017 IEEE Energy Conversion Congress and Exposition (ECCE), Cincinnati, OH, USA, 2017, pp. 1343-1349. doi: 10.1109/ECCE.2017.8095946
72 P. Diaz Reigosa, F. Iannuzzo and F. Blaabjerg, "Packaging Solutions for Mitigating IGBT Short-Circuit Instabilities," PCIM Europe 2017; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany, 2017, pp. 1-7. URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7990815&isnumber=7990665
71 P. Diaz Reigosa, F. Iannuzzo and M. Rahimo, "TCAD analysis of short-circuit oscillations in IGBTs," 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), Sapporo, Japan, 2017, pp. 151-154. doi: 10.23919/ISPSD.2017.7988933
70 A. S. Bahman, F. Iannuzzo and F. Blaabjerg, "Fuse modeling for reliability study of power electronic circuits," 2017 IEEE Applied Power Electronics Conference and Exposition (APEC), Tampa, FL, USA, 2017, pp. 829-836. doi: 10.1109/APEC.2017.7930792
69 L. Ceccarelli, A. S. Bahman, F. Iannuzzo and F. Blaabjerg, "A fast electro-thermal co-simulation modeling approach for SiC power MOSFETs," 2017 IEEE Applied Power Electronics Conference and Exposition (APEC), Tampa, FL, USA, 2017, pp. 966-973. doi: 10.1109/APEC.2017.7930813
------ 2016
68 N. Baker, F. Iannuzzo, S. Munk-Nielsen, L. Dupont and Y. Avenas, "Experimental Evaluation of IGBT Junction Temperature Measurement via a Modified-VCE (?VCE_?VGE) Method with Series Resistance Removal," CIPS 2016; 9th International Conference on Integrated Power Electronics Systems, Nuremberg, Germany, 2016, pp. 1-6, VDE, ISBN: 978-3-8007-4171-7. http://ieeexplore.ieee.org/document/7736713002F
67 G. Zhang, Y. Yang, F. Iannuzzo, K. Li, F. Blaabjerg and H. Xu, "Loss distribution analysis of three-level active neutral-point-clamped (3L-ANPC) converter with different PWM strategies," 2016 IEEE 2nd Annual Southern Power Electronics Conference (SPEC), Auckland, 2016, pp. 1-6. doi: 10.1109/SPEC.2016.7846157
66 P. D. Reigosa, F. Iannuzzo, S. Munk-Nielsen and F. Blaabjerg, "New layout concepts in MW-scale IGBT modules for higher robustness during normal and abnormal operations," 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), Long Beach, CA, 2016, pp. 288-294. doi: 10.1109/APEC.2016.7467886
65 H. Luo, F. Iannuzzo, F. Blaabjerg, W. Li and X. He, "Effects of uneven temperature of IGBT and diode on switching characteristics of bridge legs in MW-level power converters," 2016 IEEE 7th International Symposium on Power Electronics for Distributed Generation Systems (PEDG), Vancouver, BC, Canada, 2016, pp. 1-7. doi: 10.1109/PEDG.2016.7527080
64 H. Luo, F. Iannuzzo, K. Ma, F. Blaabjerg, W. Li and X. He, "Active gate driving method for reliability improvement of IGBTs via junction temperature swing reduction," 2016 IEEE 7th International Symposium on Power Electronics for Distributed Generation Systems (PEDG), Vancouver, BC, Canada, 2016, pp. 1-7. doi: 10.1109/PEDG.2016.7527079
63 C. Gomez Suarez, P. Diaz Reigosa, F. Iannuzzo, I. Trintis and F. Blaabjerg, "Parameter Extraction for PSpice Models by means of an Automated Optimization Tool - An IGBT model Study Case," PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany, 2016, pp. 1-8. URL: http://ieeexplore.ieee.org/stamp/stamp.jsp? tp=&arnumber=7499439&isnumber=7499336
62 H. Luo, F. Iannuzzo, F. Blaabjerg, W. Li and X. He, "Estimation method for turn-off collector voltage of IGBTs using emitter-auxiliary inductor," 2016 IEEE 8th International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia), Hefei, 2016, pp. 3670-3675. doi: 10.1109/IPEMC.2016.7512883
61 P. Diaz Reigosa, H. Wang, F. Iannuzzo and F. Blaabjerg, "Approaching repetitive short circuit tests on MW-scale power modules by means of an automatic testing setup," 2016 IEEE Energy Conversion Congress and Exposition (ECCE), Milwaukee, WI, USA, 2016, pp. 1-8. doi: 10.1109/ECCE.2016.7854884
60 G. Tsolaridis, K. Ilves, P. D. Reigosa, M. Nawaz and F. Iannuzzo, "Development of Simulink-based SiC MOSFET modeling platform for series connected devices," 2016 IEEE Energy Conversion Congress and Exposition (ECCE), Milwaukee, WI, USA, 2016, pp. 1-8. doi: 10.1109/ECCE.2016.7855041
59 P. Diaz Reigosa, H. Luo, F. Iannuzzo and F. Blaabjerg, "Investigation on the short circuit safe operation area of SiC MOSFET power modules," 2016 IEEE Energy Conversion Congress and Exposition (ECCE), Milwaukee, WI, USA, 2016, pp. 1-6. doi: 10.1109/ECCE.2016.7855221
58 A. S. Bahman, F. Iannuzzo, C. Uhrenfeldt, F. Blaabjerg and S. Munk-Nielsen, "Prediction of short-circuit-related thermal stress in aged IGBT modules," 2016 IEEE Energy Conversion Congress and Exposition (ECCE), Milwaukee, WI, USA, 2016, pp. 1-7. doi: 10.1109/ECCE.2016.7855365
57 L. Ceccarelli, F. Iannuzzo and M. Nawaz, "PSpice modeling platform for SiC power MOSFET modules with extensive experimental validation," 2016 IEEE Energy Conversion Congress and Exposition (ECCE), Milwaukee, WI, USA, 2016, pp. 1-8. doi: 10.1109/ECCE.2016.7855369
56 V. Dimitris Karaventzas, M. Nawaz and F. Iannuzzo, "Reliability assessment of SiC power MOSFETs from the end user's perspective," 2016 IEEE Energy Conversion Congress and Exposition (ECCE), Milwaukee, WI, USA, 2016, pp. 1-8. doi: 10.1109/ECCE.2016.7855388
55 E. Gurpinar, A. Castellazzi, F. Iannuzzo, Y. Yang and F. Blaabjerg, "Ultra-low inductance design for a GaN HEMT based 3L-ANPC inverter," 2016 IEEE Energy Conversion Congress and Exposition (ECCE), Milwaukee, WI, USA, 2016, pp. 1-8. doi: 10.1109/ECCE.2016.7855540
------ 2015
54 P. Diaz Reigosa, R. Wu, F. Iannuzzo and F. Blaabjerg, (Best paper)"Evidence of Gate Voltage Oscillations during Short Circuit of Commercial 1.7 kV / 1 kA IGBT Power Modules," PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of, Nuremberg, Germany, 2015, pp. 1-8. URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7149116&isnumber=7148817
53 R. Wu, P. Diaz Reigosa, F. Iannuzzo, H. Wang and F. Blaabjerg, "A comprehensive investigation on the short circuit performance of MW-level IGBT power modules," Power Electronics and Applications (EPE'15 ECCE-Europe), 2015 17th European Conference on, Geneva, 2015, pp. 1-9. doi: 10.1109/EPE.2015.7311761
52 N. Baker, S. Munk-Nielsen, F. Iannuzzo, L. Dupont and M. Liserre, "Experimental evaluation of IGBT junction temperature measurement via peak gate current," Power Electronics and Applications (EPE'15 ECCE-Europe), 2015 17th European Conference on, Geneva, 2015, pp. 1-11. doi: 10.1109/EPE.2015.7311733
51 Rui Wu; Smirnova, L.; Huai Wang; Iannuzzo, F.; Blaabjerg, F., "Comprehensive investigation on current imbalance among parallel chips inside MW-scale IGBT power modules," in Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on , vol., no., pp.850-856, 1-5 June 2015. doi: 10.1109/ICPE.2015.7167881
50 R. Wu, F. Iannuzzo, H. Wang, F. Blaabjerg, “Non-Destructive Investigation on Short Circuit Capability of Wind Turbine-Scale IGBT Power Modules”, Wind energy Grid-Adaptive Technologies 2014, WeGAT 2014, 20?22 October 2014, Jeju, Korea. http://wegat.jbnu.ac.kr/paperSearch.html?menu=&smenu1=&smenu2=&searchYear=2014&page=10
49 R. Wu, F. Iannuzzo, H. Wang, F. Blaabjerg, “Electro-thermal modeling of high power IGBT module short-circuits with experimental validation”, proceedings of RAMS 2015, the 61st Reliability And Maintainability Symposium, 26-29 January 2015, Palm Harbor, FL, USA. DOI: 10.1109/RAMS.2015.7105151
48 N. Baker, S. Munk-Nielsen, M. Liserre, F. Iannuzzo, “Online junction temperature measurement using peak gate current”, Applied Power Electronics Conference and Exposition (APEC), 2015 IEEE. DOI: 10.1109/APEC.2015.7104511
------ 2014
47 R. Wu, L. Smirnova, F. Iannuzzo, H. Wang, F. Blaabjerg, “Investigation on the Short-circuit Behavior of an aged IGBT Module Through a 6 kA/1.1 kV Non-Destructive Testing Equipment”, 40th Annual Conference of the IEEE Industrial Electronics Society, IECON 2014, 29 Oct - 01 Nov 2014, Dallas, TX, USA. DOI: 10.1109/IECON.2014.7048996
46 Sintamarean, C. ; Wang, H. ; Blaabjerg, F. ; Iannuzzo, F. “The impact of gate-driver parameters variation and device degradation in the PV-inverter lifetime”, Energy Conversion Congress and Exposition (ECCE), 2014 IEEE, Page(s): 2257-2264, DOI: 10.1109/ECCE.2014.6953704
45 Rui Wu ; Iannuzzo, F. ; Huai Wang ; Blaabjerg, F. “An Icepak-PSpice co-simulation method to study the impact of bond wires fatigue on the current and temperature distribution of IGBT modules under short-circuit”, Energy Conversion Congress and Exposition (ECCE), 2014 IEEE, Page(s): 5502-5509, DOI: 10.1109/ECCE.2014.6954155
44 Rui Wu ; Huai Wang ; Ke Ma ; Ghimire, P. ; Iannuzzo, F. ; Blaabjerg, F., “A temperature-dependent thermal model of IGBT modules suitable for circuit-level simulations”, Energy Conversion Congress and Exposition (ECCE), 2014 IEEE , Page(s): 2901-2908, DOI: 10.1109/ECCE.2014.6953793
43 Baker, N.; Munk-Nielsen, S.; Liserre, M.; Iannuzzo, F., "Online junction temperature measurement via internal gate resistance during turn-on," Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on , vol., no., pp.1,10, 26-28 Aug. 2014. doi: 10.1109/EPE.2014.6911024
42 Smirnova, L.; Pyrhonen, J.; Iannuzzo, F.; Rui Wu; Blaabjerg, F., "Round busbar concept for 30 nH, 1.7 kV, 10 kA IGBT non-destructive short-circuit tester," Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on , vol., no., pp.1,9, 26-28 Aug. 2014. doi: 10.1109/EPE.2014.6910712
41 Rui Wu; Iannuzzo, F.; Huai Wang; Blaabjerg, F., "Fast and accurate Icepak-PSpice co-simulation of IGBTs under short-circuit with an advanced PSpice model," Power Electronics, Machines and Drives (PEMD 2014), 7th IET International Conference on, vol., no., pp.1-5, 8-10 April 2014. doi: 10.1049/cp.2014.0466
40 C. Abbate, S. Baccaro, G. Busatto, M. Citterio, P. Cova, N. Delmonte, V. De Luca, S. Fiore, F. Giuliani, F. Iannuzzo, A. Lanza, S. Latorre, M. Lazzaroni, A. Sanseverino, G. Spiazzi, F. Velardi, "Testing Integrated COTS DC/DC Converters in Hostile Environment", Fourth Common ATLAS CMS Electronics Workshop for LHC upgrades, 18-20 march 2014, ACES 2014, CERN, Geneva, Switzerland.
------ 2013
39 Rui Wu; Blaabjerg, F.; Huai Wang; Liserre, M.; Iannuzzo, F., "Catastrophic failure and fault-tolerant design of IGBT power electronic converters - an overview," Industrial Electronics Society, IECON 2013 - 39th Annual Conference of the IEEE , vol., no., pp.507,513, 10-13 Nov. 2013. doi: 10.1109/IECON.2013.6699187
38 S.Fiore, C.Abbate, S.Baccaro, G.Busatto, M.Citterio, F.Iannuzzo, A.Lanza, S.Latorre, M.Lazzaroni, A.Sanseverino, F.Velardi, "Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments", 14th ICAPTT Conference on Astroparticle, Particle, Space Physics and Detectors for Physics and Applications, 23-27 September 2013, ICATPP 2013, Como, Italy
37 Abbate, C., Alderighi, M., Baccaro, S., Busatto, G., Citterio, M., Cova, P., ... Zanoni, E. (2013). “Radiation performance of new semiconductor power devices for the LHC experiment upgrades”. PoS: proceedings of science.
------ 2012
------ 2011
36 C. Ronsisvalle, V. Enea, C. Abbate, G. Busatto, F. Iannuzzo, A. Sanseverino, G.A.P. Cirrone. "Effects of back-side He irradiation on MOS-GTO performances". In: IEEE 23rd International Symposium on Power Semiconductor Devices and ICs - ISPSD2011. San Diego, CA - USA, 23-26 May 2011, New York - USA: IEEE, p. 144-147, ISBN/ISSN: 9781424484256, doi: 10.1109/ISPSD.2011.5890811
------ 2010
35 G. Busatto, C. Abbate, F. Iannuzzo, “Non Destructive SOA Testing of Power Modules” (Invited paper), 6th International Conference on Integrated Power Electronics Systems, CIPS 2010, Nuremberg, Germany, March 16-18 2010. URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5730647&isnumber=5730626
34 C. Abbate, G. Busatto, F. Iannuzzo, C. Pagliarone, G.M. Piacentino, F. Bedeschi, “Comparison among eligible topologies for MARX klystron modulators,” Proc. 1st International Particle Accelerator Conference, IPAC’10, pp. 3284-3286, Kyoto – Japan. (ISBN 978-92-9083-352-9).
------ 2009
33 G. Busatto, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, G.Currò, "Induced Damages in Power MOSFETs after Heavy Ions Irradiation", Proceedings of the 11th Conference on Astroparticle, Particle, Space Physics, Detectors and Medical Physics Applications, ICATPP'09, Villa Olmo, Como 5-9 October 2009.
32 Abbate, C.; Busatto, G.; Iannuzzo, F.; , "The effects of the stray elements on the failure of parallel connected IGBTs during Turn-Off," Power Electronics and Applications, 2009. EPE '09. 13th European Conference on , vol., no., pp.1-9, 8-10 Sept. 2009.
31 G. Busatto, G. Currò, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, “The role of the charge generated during heavy ion irradiation in the gate damage of medium voltage power MOSFET”, Proceedings of the 9th European Workshop on Radiation Effects on Components and Systems, RADECS 2009, September 14-18, Bruges, Belgium.
30 C. Abbate, G. Busatto, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, S. Baccaro, "Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters" (Invited paper), Proceedings of the 11th Conference on Astroparticle, Particle, Space Physics, Detectors and Medical Physics Applications, ICATPP’09, Villa Olmo, Como 5-9 October 2009. doi: 10.1142/9789814307529_0091
------ 2008
29 A. Porzio, F. Velardi, G. Busatto, F. Iannuzzo, A. Sanseverino and G. Currò, "A 3-D simulation study about Single Event Gate damage in medium voltage power MOSFET," 2008 European Conference on Radiation and Its Effects on Components and Systems, Jyvaskyla, 2008, pp. 209-212. doi: 10.1109/RADECS.2008.5782713
28 G. Busatto, C. Abbate, B. Abbate and F. Iannuzzo, "Non-Destructive Experimental Investigation about RBSOA in High Power IGBT Modules," 5th International Conference on Integrated Power Electronics Systems, Nuremberg, Germany, 2008, pp. 1-5. URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5755718&isnumber=5755665
27 E. La Marra, F. Iannuzzo, M. Di Zenzo, V. Micali, G. Valeri, D. Bianco, G. Busatto, “Experimental Analysis of Energy Consumption by MobileDDR Memory for Mobile Applications”, Proc. of the IEEE International Symposium on Industrial Electronics – ISIE’08, June 30-July 2, 2008, Cambridge, UK.
26 G. Busatto , G. Currò , F. Iannuzzo, A. Porzio , A. Sanseverino , F. Velardi, “Heavy ions induced single event gate damages in medium voltage power MOSFET”, Proceedings of the IEEE Nuclear and Space Radiation Effects Conference, NSREC’08, July 14-18, 2008, Tucson, Arizona, USA.
25 G. Busatto, C. Abbate, F. Iannuzzo, B. Abbate, L. Fratelli, B. Cascone, R. Manzo, “High Voltage, High Performance Switch using Series Connected IGBTs”, Proceedings of the 39th IEEE Power Electronics Specialists Conference, PESC’08, June 15-19, 2008, Rhodes, Greece.
------ 2007
24 C. Abbate, G. Busatto, F. Iannuzzo, L. Fratelli, “Experimental characterisation of high efficiency resonant gate driver circuit”, Proc. 12th European Conference on Power Electronics and Applications, EPE '07, Aalborg, Denmark.
------ 2006
23 C. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo: “Experimental - Simulative procedure to Predict the EMI Generated in High Power Converters based on IGBT modules” Proc. 4th International Conference on Integrated Power Systems, CIPS 2006, 7 - 9 June, 2006, pp. 117-122, Naples – Italy.
22 G. Busatto, G. Currò, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi: “Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment” Proc. 8th Radiation and its effects on components and Systems, RADECS 2006 - September 2006, Athens, Greece.
------ 2005
21 Busatto, G.; Abbate, C.; Fratelli, L.; Iannuzzo, F.; Giannini, G.; Cascone, B.; “EMI Analysis in High power Converters for Traction Application”, Power Electronics and Applications, 2005 European Conference on, 11-14 Sept. 2005 Page(s):P.1 - P.9.
20 G. Busatto, C. Abbate, F. Iannuzzo, L. Fratelli, B. Cascone, G. Giannini: “EMI Characterisation of high power IGBT modules For Traction Application” Power Electronics Specialists Conference, 2005, PESC 05, Record 36th, pp. 2180-2186, Recife - Brazil.
19 A. Porzio, G. Busatto, F. Velardi, F. Iannuzzo, A. Sanseverino, G. Currò, “Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET” Proc. 8th Radiation and its effects on components and Systems, RADECS 2005 - September 2005, Cap d’Agde – France.
18 F. Iannuzzo: “FPGA implementation of the race-control algorithm for the full-bridge passive resonant commutated poles converter”, Proc. of the 32nd IEEE Industrial Electronics Society Annual Conference, IECON 2005, 6-10 Nov. 2005, Raleigh, NC, USA.
17 Abbate, C.; Busatto, G.; Fratelli, L.; Iannuzzo, F.; Cascone, B.; Giannini, G.; “Series Connection of High Power IGBT modules for traction applications”, Power Electronics and Applications, 2005 European Conference on, 11-14 Sept. 2005 Page(s):P.1 - P.8
16 C. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo: “The Role of IGBT Module in Electromagnetic Noise Emission of Power Converters”, ESREF 2005, 10-14 October 2005, Arcachon, France.
------ 2004
15 Velardi, F., Iannuzzo, F., Busatto, G., Porzio, A., Sanseverino, A., Currò, G., Cascio, A., Frisina, F.,“The role of the parasitic BJT parameters on the reliability of new generation power MOSFET during heavy ion exposure”, (2004) Microelectronics Reliability, 44 (9-11 SPEC. ISS.), pp. 1407-1411. doi: 10.1016/j.microrel.2004.07.028
14 G. Busatto, A. Cascio, G. Currò, F. Frisina, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, “Cosmic ray effects on power MOSFET”, Proc. SPEEDAM’2004, Capri, Italy, 2004, pages: 643-647.
13 Abbate, C.; Busatto, G.; Manzo, R.; Fratelli, L.; Cascone, B.; Giannini, G.; Iannuzzo, F.; “Experimental optimisation of high power IGBT modules performances working at the edges of their safe operating area”, Power Electronics Specialists Conference, 2004. PESC 04, Volume 4, 2004 Page(s):2588 - 2592.
12 C. Abbate, G. Busatto, L. Fratelli, F. Iannuzzo, R. Manzo, “Innovative driving strategies for new generation high power igbt modules”, Proc. SPEEDAM’2004, Capri, Italy, pages: 699-703.
------ 2003
11 G. Busatto, C. Abbate, B. Cascone, R. Manzo, L. Fratelli, G. Giannini, F. Iannuzzo, F. Velardi, “Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents” Proc. of PEDS 2003, November 2003.
10 F. Velardi, F. Iannuzzo, G. Busatto, J. Wyss, A. Sanseverino, A. Candelori, G. Currò, A. Cascio, F. Frisina, A. Cavagnoli, “Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure” Proc. RADECS 2003 - 8th Radiation and its effects on components and Systems, September 2003.
------ 2002
9 F. Velardi, F. Iannuzzo, G. Busatto, J. Wyss, A. Sanseverino, “An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure,” Proc. of Radiation Effects on Components and Systems Conference, pp. 187-190, Padova, 19-20 September 2002.
8 G. Busatto, R. La Capruccia, F. Iannuzzo, F. Velardi, R. Roncella, “An On-Chip Non Invasive Integrated Current Sensing” Proc. of International Seminar on Power Semiconductors, pp. 135-142, Praga 4-6 September 2002.
7 F. Velardi, F. Iannuzzo, G. Busatto, J. Wyss, A. Candelori, “Experimental Study of Charge Generation Mechanisms in Power MOSFETs due to Energetic Particle Impact,” Proc. of International Seminar on Power Semiconductors, pp. 75-80, Praga 4-6 September 2002.
------ 2000
6 F. Iannuzzo, G.Busatto, “A general methodology for circuit simulation of high-voltage power devices” Proc. SPEEDAM 2000, pp. A3,25-31, June 2000, Ischia, Italia.
5 G.Busatto, F. Iannuzzo, P.Grimaldi, “Lumped Charge PSPICE Model for High–Voltage IGBTs” Proc. IEEE Industry Applications Society Meeting, IAS’2000, October 2000, Roma, Italia
------ 1999
4 G.Busatto, F. Iannuzzo, J.Wyss, D.Pantano, D.Bisello, “Effects of heavy ion impact on power diodes” Proc. RADECS'99 - 5th Radiation and its effects on components and Systems, pp. F.35-37, 1999
3 G.V.Persiano, F. Iannuzzo, G.Busatto, P.Spirito, “Numerical Analysis of the Activation of the Parasitic BJT during the Reverse Recovery of Power MOSFET Internal Diode” Proc. 8th European Conference on Power Electronics and Applications, EPE '99
------ 1998
2 F. Iannuzzo, G.Busatto, “A circuit model for GTOs based on lumped charge approach,” Proc. 4th International Seminar on Power Semiconductors, ISPS '98, pp. 83-88, September 1998, Praga, Repubblica Ceca.
1 G.Busatto, F. Iannuzzo, L.Fratelli, “PSPICE model for GTOs” Proc. SPEEDAM’98, pp. P2,5-10, June 1998, Sorrento, Italia.
National Peer-reviewed Conferences

[Ultima modifica: mercoledì 30 novembre 2016]