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VELARDI FRANCESCO - Ricercatore

Italian version

Department: Dipartimento: Ingegneria Elettrica e dell'Informazione "Maurizio Scarano"

Scientific Sector: ING-INF/01

Student reception: Martedì 10.00-12.00 Giovedì 10.00-12.00

Contact info:
E-Mail: velardi@unicas.it

  • Teaching ELETTRONICA (31440)

    Terzo anno di Ingegneria Informatica e delle Telecomunicazioni (L-8), Curriculum unico
    Credits (CFU): 9,00

    Program:
    Introduction to electronics
    Signals, Frequency Spectrum of Signals, Analog and Digital Signals, Amplifiers, Circuit Models for Amplifiers, Frequency Response of Amplifiers.

    Operational Amplifiers
    The Op-Amp Terminals, The Ideal Op Amp, Analysis of Circuits Containing Ideal Op Amps, Example of Op Amp Circuits, Effect of Finite Open-Loop Gain on Circuit Performances, Large Signal Operation of Op Amp, DC Imperfection.

    Diodes
    The Ideal Diode, Terminal Characteristics of Junction Diodes, Physical Operation of Diodes, Analysis of Diode Circuits, Examples of Rectifier Circuits.

    Bipolar Junction Transistors (BJTs)
    Physical Structure and Modes of Operation, Operation of the npn Transistor in the Active Mode, The pnp Transistor, Circuit Symbols and Conventions, Graphical Representation of transistor Characteristics, Analysis of Transistor Circuits at DC, The Transistor as an Amplifier, Small Signal Equivalent Circuit Model, Graphical Analysis, Biasing the BJT for Discrete Circuit Design, Basic Single-Stage BJT Amplifiers Configurations. The Basic BJT Logic Inverter. Spice BJT Model and Simulation Examples.

    Field-Effect Transistors (FETs)
    Structure and Physical Operation of the Enhancement-Type MOSFET, Current-Voltage Characteristics of the Enhancement MOSFET, The Depletion Type MOSFET, MOSFET Circuits at DC, The MOSFET as an Amplifier, Biasing in MOS Amplifier Circuits, Basic Configurations of Single-Stage IC MOS Amplifier: The CMOS Common Source Amplifier. The CMOS Digital Logic Inverter. The MOSFET as an Analogical Switch. The SPICE MOSFET Model and Simulation Examples.

    Differential and Multistage Amplifiers
    The BJT Differential Pair, Small Signal Operation of the BJT Differential Amplifier, Biasing in BJT Integrated Circuits, The BJT Differential Amplifiers with Active Load, MOS Differential Amplifiers, Multistage Amplifiers.

    Frequency Response
    The Amplifier Transfer Function, Frequency Response of the Common Source\Common Emitter Amplifiers, Frequency Response of the Common Gate\Common Base Amplifiers, Frequency Response of the Common Drain\Common Collector Amplifiers, The Frequency Response of the Differential Amplifier.

    Digital Circuits
    Digital Circuit Design, Design and Performances of the CMOS Inverter, CMOS Logic-Gate Circuits, Psuedo-NMOS Logic Circuits.
    Combinational Circuits, Programmable Logics. Example of Spice Simulation of Digital Circuits.

    Reference books:
    Microelectronics Circuits
    Sedra/Smith
    Oxford

    Elettronica Digitale
    Paolo Spirito
    Mcgraw-Hill

  • Teaching ELETTRONICA (90780)

    Terzo anno di Ingegneria industriale CASSINO (L-9), Elettrica
    Credits (CFU): 6,00

    Program:
    Signals. The frequency spectrum of signals. Analog and digital signals. Amplifiers. Circuit models of amplifiers. The frequency response of amplifiers. Single-time-constant networks.
    Operational amplifiers. The ideal op-amp. The inverting configuration. Applications of the inverting configuration.The non-inverting configuration. Effect of the open-loop gain and bandwidth on circuit performance. The difference amplifier. Large-signal operation of op amps. DC imperfections.
    Bistable multivibrators. The feedback loop. Transfer Characteristics of the bistable circuit. Triggering the bistable circuit. The bistable circuit as a memory element. A bistable circuit with noninverting transfer characteristics. Application of the bistable circuit as a comparator. Generation of the square and triangular waveforms using astable multivibrators.
    Basic semiconductor concepts. The p-n junction. The p-n junction under reverse-bias conditions. The depletion capacitance. The p-n junction in the breakdown region. The p-n junction under forward-bias conditions. Diffusion capacitance. Analysis of diode circuits: graphical analysis and iterative analysis. Simplified diode models. Zener diodes. Design of the Zener shunt voltage regulator. Rectifier circuits. the half-wave rectifier. Full-wave rectifier. the bridge rectifier. The rectifier with a filter capacitor.
    The bipolar junction transistor: physical structure and models. Circuit symbols and conventions. Graphical representation of transistor characteristics. analysis of transistor circuits at DC. The transistor as an amplifier. DC conditions and small-signal equivalent circuit models. The common-emitter amplifier. The common-emitter amplifier with resistance in the emitter. The common-base amplifier. The common-collector amplifier or emitter follower. The frequency response of the basic single-stage BJT amplifier configurations.

    Reference books:
    Microelectronic Circuits
    Sedra - Smith
    Oxford University Press

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CURRICULUM VITAE DI Francesco Velardi
 
PERSONAL INFORMATION
                First name /Surname    Francesco Velardi
                Address                       Via Di Biasio 140, 03043, Cassino, (FR), ITALY
                E-mail                          velardi@unicas.it
                Nationality                    Italian
                Date of birth                  24/07/1967
 
WORK EXPERIENCE
                Dates                           From 2006
Occupation                   Researcher at the University of Cassino and Southern Lazio.

Dates                           From 2000 to 2001
Occupation                  Collaboration with Dipartimento di Ingegneria dell’Informazione – Seconda Università di Napoli nell’ambito on “Magnetostrective Equipment and Systems for more electric Aircraft”.

EDUCATION
Dates                           2004
Title of qualification       PhD in Information Engineering at the University of Cassino and Southern Lazio
Thesis Title: Single-Event-Effects on power MOSFETs due to heavy ions impact.
Tutor Prof. G.Busatto
               
                Dates                           1999
Title of qualification        Degree in Electronic Engineering at the University of Naples “Federico II”.
Thesis Title: identification of non-liner dynamic systems.
Rating achieved: 110/110 cum laude
 
TEACHING
                                                              
Dates                          From 2004/2005 to 2005/2006 Electronics Laboratory, at the University of Cassino and Southern Lazio.
From 2005/2006 to 2009/2010 Optoelectronics , at the University of Cassino and Southern Lazio.
From 2005/2006 to 2015/2016 Electronics, at the University of Cassino and Southern Lazio.

                              
RESEARCH ACTIVITY
 
Field of interest           Modeling of complex dynamic systems;
Single-Event-Effets on power devices;
Reliability of power devices;
Industrialization of crystalline silicon solar cells with high efficiency.

International journal:
1. Abbate C., Busatto G., Cova P., Delmonte N., Giuliani F., Iannuzzo F., Sanseverino A., Velardi F. (2015). Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, vol. 62, p. 202-209, ISSN: 0018-9499, doi: 10.1109/TNS.2014.2387014
2. Abbate C., Busatto G., Cova P., Delmonte N., Giuliani F., Iannuzzo F., Sanseverino A., Velardi F. (2015). Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, vol. 62, p. 202-209, ISSN: 0018-9499, doi: 10.1109/TNS.2014.2387014
3. Abbate C., Busatto G., Iannuzzo F., Mattiazzo S., Sanseverino A., Silvestrin L., Tedesco D., Velardi F. (2015). Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT. MICROELECTRONICS RELIABILITY, vol. 55, p. 1496-1500, ISSN: 0026-2714, doi: 10.1016/j.microrel.2015.06.139
4. C. Abbate, M. Alderighi, S. Baccaro, G. Busatto, M. Citterio, P.Cova, N .Belmonte, V. De Luca, S. Fiore, S. Gerardin, E. Ghisolfi, F. Giuliani, F. Iannuzzo, A. Lanza, S. Latorre, M. Lazzaroni, G. Meneghesso, A. Paccagnella, F. Rampazzo, M. Riva, A. Sanseverino, R. Silvestri, G. Spiazzi, F. Velardi, E. Zanoni (2014). Developments on DC/DC converters for the LHC experiment upgrades. JOURNAL OF INSTRUMENTATION, vol. Vol.9 2014, p. 1-10, ISSN: 1748-0221, doi: 10.1088/1748-0221/9/02/C02017
5. C. Abbate, G. Busatto, P. Cova, N. Delmonte, F. Giuliani, F. Iannuzzo, A. Sanseverino, F. Velardi (2014). Thermal damage in SiC Schottky diodes induced by SE heavy ions. MICROELECTRONICS RELIABILITY, vol.
6. C. Abbate, F. Iannuzzo, G. Busatto, A. Sanseverino, F. Velardi, C. Ronsisvalle, J. Victory (2014). Turn-off instabilities in large area IGBTs. MICROELECTRONICS RELIABILITY, vol. 2014, p. 1927-1934, ISSN: 0026-2714, doi: 10.1016/j.microrel.2014.07.128
7. C. Abbate, G.Busatto, F. Iannuzzo, C.Ronsisvalle, A. Sanseverino, F. Velardi (2013). Scattering parameter approach applied to the stability analysis of power IGBTs in Short Circuit. MICROELECTRONICS RELIABILITY, vol. Vol. 53 2013, p. 1707-1712, ISSN: 0026-2714
8. G. Busatto, V. De Luca, F. Iannuzzo, A. Sanseverino, F. Velardi (2013). Single Event Effects in Power MOSFETs during Heavy Ion Irradiations Performed after Gamma Ray Degradation. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, vol. Vol.60, p. 3793-3801, ISSN: 0018-9499, doi: 10.1109/TNS.2013.2278038
9. L. Silvestrin, D. Bisello, G. Busatto, P. Giubilato, F. Iannuzzo, S. Mattiazzo, D. Pantano, A. Sanseverino, M. Tessaro, F. Velardi, J. Wyss (2012). A time-resolved IBICC experiment using the IEEM of the SIRAD facility. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS, vol. 273, p. 234-236, ISSN: 0168-583X, doi: 10.1016/j.nimb.2011.07.083
10. G. Busatto, V. De Luca, F. Iannuzzo, A. Sanseverino, F. Velardi (2012). Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure. MICROELECTRONICS RELIABILITY, vol. 52, p. 2363-2367, ISSN: 0026-2714, doi: 10.1016/j.microrel.2012.06.153
11. M. Alderighi, M. Citterio, M. Riva, S. Latorre, Costabeber, A. Paccagnella, F. Sichirollo, G. Spiazzi, M. Stellini, P. Tenti, P. Cova, N. Delmonte, A. Lanza, M. Bernardoni, R. Menozzi, S. Baccaro, F. Iannuzzo, A. Sanseverino, G. Busatto, V. De Luca, F. Velardi (2012). Power converters for future LHC experiments. JOURNAL OF INSTRUMENTATION, vol. 7, p. 1-15, ISSN: 1748-0221, doi: 10.1088/1748-0221/7/03/C03012
12. G. Busatto, D. Bisello, G. Currò, P. Giubilato, F. Iannuzzo, S. Mattiazzo, D. Pantano, A. Sanseverino, L. Silvestrin, M. Tessaro, F. Velardi, J. Wyss (2011). A new test methodology for an exhaustive study of single-event-effects on power MOSFETs. MICROELECTRONICS RELIABILITY, vol. Volume 51, p. 1995-1998, ISSN: 0026-2714, doi: 10.1016/j.microrel.2011.07.023
13. P. Tenti, G. Spiazzi, S. Buso, M. Riva, P. Maranesi, F. Belloni, P. Cova, R. Menozzi, N. Delmonte, M. Bernardoni, F. Iannuzzo, G. Busatto, A. Porzio, F. Velardi, A. Lanza, M. Citterio, C. Meroni (2011). Power supply distribution system for calorimeters at the LHC beyond the nominal luminosity. JOURNAL OF INSTRUMENTATION, vol. 2011, p. 1-16, ISSN: 1748-0221, doi: 10.1088/1748-0221/6/06/P06005
14. G. Busatto, G. Curro’, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi (2010). Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET. MICROELECTRONICS RELIABILITY, vol. Volume 50, p. 1842-1847, ISSN: 0026-2714, doi: 10.1016/j.microrel.2010.07.039
15. G. BUSATTO, G. CURRÒ, F. IANNUZZO, A. PORZIO, A. SANSEVERINO, F. VELARDI (2009). Experimental Study about Gate Oxide Damages in Patterned MOS Capacitor Irradiated with Heavy Ions. MICROELECTRONICS RELIABILITY, vol. 49, p. 1033-1037, ISSN: 0026-2714, doi: 10.1016/j.microrel.2009.07.012
16. G. BUSATTO, G. CURRÒ, F. IANNUZZO, A. PORZIO, A. SANSEVERINO, F. VELARDI (2009). Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, vol. 56, p. 3573-3581, ISSN: 0018-9499, doi: 10.1109/TNS.2009.2032397
17. BUSATTO G, CURRÒ G, F. IANNUZZO, PORZIO A, SANSEVERINO A, VELARDI F (2008). Experimental Evidence of “Latent Gate Oxide Damages” in Medium Voltage Power MOSFET as a Result of Heavy Ions Exposure. MICROELECTRONICS RELIABILITY, vol. 48, p. 1306-1309, ISSN: 0026-2714, doi: 10.1016/j.microrel.2008.07.030
18. G. BUSATTO, IANNUZZO F, PORZIO A, SANSEVERINO A, VELARDI F, CURRO' G (2006). Experimental study of power MOSFET’s gate damage in radiation environment. MICROELECTRONICS RELIABILITY, vol. 46, p. 1854-1857, ISSN: 0026-2714, doi: 10.1016/j.microrel.2006.07.069
19. G. BUSATTO, A. PORZIO, F. VELARDI, F. IANNUZZO, A. SANSEVERINO, G. CURRO' (2005). Experimental and Numerical investigation about SEB/SEGR of Power MOSFET. MICROELECTRONICS RELIABILITY, vol. 45, p. 1711-1716, ISSN: 0026-2714
20. VELARDI F, F. IANNUZZO, G. BUSATTO, A. PORZIO, A. SANSEVERINO, G. CURRO', A. CASCIO, F. FRISINA (2004). The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure. MICROELECTRONICS RELIABILITY, vol. 44/9-11, p. 1407-1411, ISSN: 0026-2714
21. F. VELARDI, F. IANNUZZO, G. BUSATTO, J. WYSS, A. CANDELORI (2003). Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact. MICROELECTRONICS RELIABILITY, vol. 43/4, p. 549-555, ISSN: 0026-2714
22. G. BUSATTO, R. LA CAPRUCCIA, F. IANNUZZO, F. VELARDI, R. RONCELLA (2003). MAGFET Based Current Sensing for Power Integrated Circuit. MICROELECTRONICS RELIABILITY, vol. 43/4, p. 577-583, ISSN: 0026-2714
23. G. BUSATTO, F. IANNUZZO, F. VELARDI, M.VALENTINO, G.P.PEPE (2003). Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement. MICROELECTRONICS RELIABILITY, vol. 43/7-10, p. 1907-1912, ISSN: 0026-2714
24. F. VELARDI, F. IANNUZZO, G. BUSATTO, J. WYSS, A. SANSEVERINO, A. CANDELORI, G. CURRO', A. CASCIO, F. FRISINA (2003). Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment. MICROELECTRONICS RELIABILITY, vol. 43/7-10, p. 1847-1851, ISSN: 0026-2714
25. G. BUSATTO, B. CASCONE, L. FRATELLI, M. BALSAMO, F. IANNUZZO, F. VELARDI (2002). Non_Destructive High Temperature Characterisation of High-Voltage IGBTs. MICROELECTRONICS RELIABILITY, vol. 42, p. 1635-1640, ISSN: 0026-2714
26. F. VELARDI, F. IANNUZZO, G. BUSATTO, J. WYSS, A. KAMINKSY (2002). The Reliability of New Generation Power MOSFETs in Radiation Environment. MICROELECTRONICS RELIABILITY, vol. 42, p. 1629-1634, ISSN: 0026-2714
27. C. NATALE, VELARDI F, C. VISONE (2001). Identification and Compensation of Hysteresis for Magnetostrictive Actuators. PHYSICA. B, CONDENSED MATTER, vol. 306, p. 161-165, ISSN: 0921-4526
28. BUSATTO G, F.IANNUZZO, F. VELARDI, J.WYSS (2001). Non-destructive tester for single event burnout of power diodes. MICROELECTRONICS RELIABILITY, vol. 41, p. 1725-1729, ISSN: 0026-2714

International conferences:
1. C. Ronsisvalle, H. Fischer, K.S.Park, C.Abbate, A. Sanseverino, F. Velardi, G.Busatto (2013). High Frequency Capacitive behavior of field stop trench gate IGBTs operating in Short Circuit. In: Applied Power Electronics Conference and Exposition (APEC). p. 183-188, Long Beach, CA:IEEE, ISBN: 978-1-4673-4353-4, doi: 10.1109/APEC.2013.6520205
2. G. BUSATTO, F. IANNUZZO, A. PORZIO, A. SANSEVERINO, F. VELARDI, G.CURRÒ (2009). Induced Damages in Power MOSFETs after Heavy Ions Irradiation. In: Proceedings of the 11th Conference on Astroparticle, Particle, Space Physics, Detectors and Medical Physics Applications, ICATPP'09.
3. C. ABBATE, G. BUSATTO, F. IANNUZZO, A. PORZIO, A. SANSEVERINO, F. VELARDI, S. BACCARO (2009). Radiation effects on power semiconductor devices for distributed power systems for electromagnetic calorimeters. In: Proceedings of the 11th Conference on Astroparticle, Particle, Space Physics, Detectors and Medical Physics Applications, ICATPP’09, Villa Olmo, Como 5-9 October 2009..
4. G. BUSATTO, G. CURRÒ, F. IANNUZZO, A. PORZIO, A. SANSEVERINO, F. VELARDI (2009). The role of the charge generated during heavy ion irradiation in the gate damage of medium power MOSFET. In: Proc. Radiation and its Effects on Components and Systems 2009.
5. A.PORZIO, F. VELARDI, G. BUSATTO, F. IANNUZZO, A. SANSEVERINO, G. CURRÒ (2008). A 3-D Simulation Study about SEGR in Medium Voltage Power MOSFET. In: Proc. Radiation and its Effects on Components and Systems 2008.
6. G. BUSATTO, G. CURR, F. IANNUZZO, A. PORZIO, A. SANSEVERINO, F. VELARDI (2006). Technology Changes Influence on the Reliability of Medium Voltage Power MOSFET’s in Radiation Environment. In: Proc. Radiation and its Effects on Components and Systems 2006.
7. A.PORZIO, G. BUSATTO, F. VELARDI, F. IANNUZZO, A. SANSEVERINO, G. CURR (2005). Experimental and 3D Simulation Study on the Role of the Parasitic BJT Activation in SEB/SEGR of Power MOSFET. In: Proc. Radiation and its Effects on Components and Systems 2005.
8. G. BUSATTO, A. PORZIO, F. VELARDI, F. IANNUZZO, A. SANSEVERINO, G. CURR (2005). Experimental and Numerical investigation about SEB/SEGR of Power MOSFET. In: Proc. ESREF 2005.
9. G. BUSATTO, A. CASCIO, G. CURR, F. FRISINA, F. IANNUZZO, A. PORZIO, A. SANSEVERINO, F. VELARDI (2004). Cosmic ray effects on power MOSFET. In: Proc. SPEEDAM. p. 643-647
10. G. BUSATTO, C. ABBATE, B. CASCONE, R. MANZO, L. FRATELLI, G. GIANNINI, F. IANNUZZO, F. VELARDI (2003). Characterisation of High-Voltage IGBT Modules at High Temperature and High Currents. In: Proc. of PEDS 2003. NOVEMBRE
11. F. VELARDI, F. IANNUZZO, G. BUSATTO, J. WYSS, A. SANSEVERINO, A. CANDELORI, G. CURR, A. CASCIO, F. FRISINA, A. CAVAGNOLI (2003). Effect of the Epitaxial Layer Features on the Reliability of Medium Blocking Voltage Power VDMOSFET during Heavy Ion Exposure. In: Proc. 8th Radiation and its effects on components and Systems.
12. F. VELARDI, F. IANNUZZO, G. BUSATTO, J. WYSS, A. SANSEVERINO (2002). An Experimental Classification of Drain and Gate Current Pulses in Low-Voltage Power MOSFETs During Radiation Exposure. In: Proc. of Radiation Effects on Components and Systems Conference, RADECS'2002. p. 187-190
13. G. BUSATTO, R. LA CAPRUCCIA, F. IANNUZZO, F. VELARDI, R. RONCELLA (2002). An On-Chip Non Invasive Integrated Current Sensing. In: -. p. 135-142
14. F. VELARDI, F. IANNUZZO, G. BUSATTO, J. WYSS, A. CANDELORI (2002). Experimental Study of Charge Generation Mechanisms in Power MOSFETs due to Energetic Particle Impact. In: Proc. of International Seminar on Power Semiconductors. p. 75-80
15. C. NATALE, VELARDI F, C. VISONE (2001). Modelling and Compensation of Hysteresis for Magnetostrictive Actuators. In: IEEE/ASME International Conference on Advanced Intelligent Mechatronics. p. 744-749

[Ultima modifica: mercoledì 30 novembre 2016]